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UNISONIC TECHNOLOGIES CO., LTD 7N65
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET
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Power MOSFET
TO-220
DESCRIPTION
The UTC 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
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TO-220F
FEATURES
* * * * * * RDS(ON) = 1.2 @VGS = 10 V Ultra low gate charge (typical 29 nC ) Low reverse transfer Capacitance ( CRSS = typical 16pF ) Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness
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TO-220F1
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SYMBOL
TO-262
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TO-263
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 7N65L-TA3-T 7N65G-TA3-T 7N65L-TF1-T 7N65G-TF1-T 7N65L-TF3-T 7N65G-TF3-T 7N65L-T2Q-T 7N65G-T2Q-T 7N65L-TQ2-R 7N65G-TQ2-R 7N65L-TQ2-T 7N65G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube
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ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 7.4 A Continuous ID 7.4 A Drain Current 29.6 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 530 mJ Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 142 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD7.4A, di/dt200A/s, VDDBVDSS, Starting TJ = 25C
THERMAL DATA
PARAMETER TO-220/TO-262/TO-263 Junction to Ambient TO-220F/TO-220F1 TO-220/TO-262/TO-263 Junction to Case TO-220F/TO-220F1 SYMBOL JA JC RATINGS 62.5 62.5 0.88 2.6 UNIT C/W C/W C/W C/W
ELECTRICAL CHARACTERISTICS (TC =25C, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT 650 1 100 -100 0.67 2.0 4.0 1.2 1400 180 21 70 170 140 130 29 7 14.5 38 V A nA nA V/C V pF pF pF ns ns ns ns nC nC nC 2 of 6
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VGS = 0V, ID = 250A VDS = 650V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature I = 250A, BVDSS/TJ D Coefficient Referenced to 25C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =300V, ID =7.4A, RG =25 (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge tF QG QGS QGD VDS=480V, ID=7.4A, VGS=10 V (Note 1, 2)
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UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7N65
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/s (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT 1.4 7.4 29.6 320 2.4 V A A ns C
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TEST CIRCUITS AND WAVEFORMS
+ VDS + L
Power MOSFET
D.U.T.
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
Power MOSFET
VDS VGS RG
VDD 10V
Pulse Width 1s Duty Factor0.1%
D.U.T.
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
12V
0.2F
50k 0.3F
Same Type as D.U.T. VDS
VGS DUT 3mA
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BVDSS IAS
ID(t) VDD
VDS(t)
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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